国产又黄又猛又粗又爽电影的起源,性人久久,日韩三区在线观看,91精品啪在线观看国产81旧版,扒开美女狂揉视频,国产丰满天美videossex

                

 
       The device is designed for express non-destructive contactless local measurement of non-equilibrium charge carrier effective lifetime in silicon substrates, epi-wafers and solar cells at different stages of manufacturing cycle. It can be used for incoming and outcoming inspection of silicon ingots and wafers, tuning and periodic inspection of semiconductor and solar cell technology quality. Lifetime determination is based on measuring photoconductivity decay after pulselight photo-exciting with usage of reflected microwave as a probe.
 



■ No length restrictions for the silicon block.

■ The system provides fast, non-contact measurements.

■ Automatic, Transmission system,continuous measurement.

■ Simple, easy to cut head and tail.

■ Cut position determination with given limit values.

■ High cost-effective.
 



■ Minority carrier lifetime test range:0.1μs-30ms

■ Scanning speed:2000mm/min

■ Size:215mm*215mm*500mm

■ Resistivity range:0.1-1000ohm.cm

■ Silicon block scanning pitch spacing：≥1mm

■ Accuracy：±3.5％，Signal Deviation≤2％